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High Vacuum Plasma-enhanced Chemical Vapor Deposition System (PECVD)
Parallel-plate Capacitive PECVD is a technology that uses plasma to activate reactive gases to promote chemical reactions on the substrate surface or near-surface space to form solid-state films. The basic principle of plasma chemical vapor deposition technology is that under the action of high frequency or DC electric field, the source gas is ionized to form plasma, and the low temperature plasma is used as the energy source, an appropriate amount of reactive gas is introduced, and the plasma discharge is used to activate the reactive gas and forms chemical vapor deposition.
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Spherical Pulsed Laser Deposition System
This system is a research and development equipment for spherical pulsed laser deposition system (PLD). Pulsed laser deposition technology is widely used, and can be used to prepare thin films of various substances such as metals, semiconductors, oxides, nitrides, carbides, borides, silicides, sulfides and fluorides. It is even used to prepare some difficult-to-synthesize material films, such as diamond and cubic nitride films.
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